Design of Microelectronic Process Experiment Based on Field-effect Transistor Gas Sensors

At present, China is facing a talent shortage in the integrated circuit industry, and it is imperative to cultivate talents with innovative and practical capabilities. Microelectronic process is the foundation of integrated circuits, and is also an important practical course for cultivating the innovative and practical abilities of integrated circuit talents. Therefore, a microelectronic process experiment based on field-effect transistor gas sensors was designed. Silicon-based electrodes were fabricated using the microelectronic process method, and the sensitive material SnO₂/ZnO was synthesized via the aqueous phase method to construct the field-effect transistor gas sensors. X-ray diffraction was used to characterize the sensitive layer material, and the gas sensing performance of the sensors was further tested. This experiment encompasses material synthesis and characterization, microelectronic process, device fabrication and gas sensing performance testing. It is involved in materials science, microelectronics and integrated circuits, and incorporates research content into experiment teaching.This approach can help stimulate students’ interest in scientific research and further cultivate their innovative and practical capabilities.