WANG Haizhen, FENG Dehai, LI Dehui. Innovative Design of Microelectronic Process Experiment Based on Field-effect Transistor Gas Sensors[J]. Experiment Science and Technology. DOI: 10.12179/1672-4550.20240056
Citation: WANG Haizhen, FENG Dehai, LI Dehui. Innovative Design of Microelectronic Process Experiment Based on Field-effect Transistor Gas Sensors[J]. Experiment Science and Technology. DOI: 10.12179/1672-4550.20240056

Innovative Design of Microelectronic Process Experiment Based on Field-effect Transistor Gas Sensors

  • Integrated circuits are the fundamental industry for society development, whose level of development is related to overall national power of the country. However, we are facing talent shortage in integrated circuits at present, it is imperative in cultivation of talents with the capability of innovation and practice. Microelectronic process is the foundation of integrated circuits, which is also the important experimental course to cultivate the innovative and practical abilities of integrated circuit talents. Therefore, we designed the microelectronic process experiment based on field-effect transistor gas sensors, microelectronic process was used to create the silicon based electrodes while wet chemistry route was applied for sensing material SnO2/ZnO fabrication to make field-effect transistor gas sensors. X-ray diffraction was used for sensing material characterization and the gas sensitivities of the sensors were also investigated. This experiment covers material synthesis and characterization, microelectronic process, device fabrication and gas sensitivity measurement, which are related to subjects from materials science, microelectronics to integrated circuits and incorporates research content into experiment teaching, can help stimulate students' interest in scientific research and further cultivate students' innovative and practical capabilities.
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