Research of the Oriented Growth of Al(OH)(1,4-NDC)·2H₂O on Silicon and its Modified Substrates

In this paper, Al(OH)(1,4-NDC)·2H2O powders and their films were separately prepared on the Si, Au/Si and COOH-Au/Si substrates by solvothermal method. It is confirmed that Al(OH)(1,4-NDC)·2H2O was growing along 100 direction on both Si and Au/Si substrate, by using X-ray wide-angle diffraction as the important characterization technique for the MOFs film oriented growth on the surface of the substrate. The experimental results show that the diffraction peaks are increasing continuously by increasing the reaction time (24-72 h) and increasing the number of crystals on the substrate. This indicates that the extended reaction time is greatly facilitates the oriented growth of Al(OH)(1,4-NDC)·2H2O films, which provides a theoretical basis for the preparation of oriented MOFs films on the surface of silicon and its modified substrates..