Abstract: To address the insufficiency in the explanation of quantum transport theory for advanced-node MOSFET devices in teaching Semiconductor Device Physics course, an interactive simulation platform based on one-dimensional ballistic transport theory was developed. The platform employs the open-source Python language and an MVC architecture to achieve an integrated simulation workflow of “parameter adjustment-numerical simulation-visualization analysis.” The platform visually demonstrates the impact of geometric parameters (e.g., channel length, gate oxide thickness), material properties (e.g., dielectric constant) as well as device architecture (e.g., double-gate, gate-all-around) on key short-channel effect (SCE) parameters including drain-induced barrier lowering (DIBL) and subthreshold swing (SS). By incorporating quantum transport theory into experimental teaching, the platform overcomes the limitations of conventional experiments in characterizing advanced-node devices. It offers significant value for training professionals in integrated circuits and advancing cutting-edge scientific research.