Abstract: Cu₂SnS₃ thin films were prepared by sulfurization sputtered stacked metallic precursor in a H₂S∶N₂ atmosphere. The structures of the prepared films were analyzed by X-ray diffraction, Raman spectrometer, scanning tunneling microscope (STM), UV-VIS-NIR spectrometer and Hall measurement system. The paper also studied the impact of sulfurization temperature on the properties of Cu₂SnS₃ thin films. Results showed that highly crystallized P-type Cu₂SnS₃ thin films were achieved when the sulfurization temperature is about 460℃. It had suitable carrier concentration of 10¹⁷/cm³, high mobility 4.40 cm²/(v·s) and low electrical resistance 4.34 Ω·cm. The design of the comprehensive experiment combined with the Cu₂SnS₃ thin film preparation, performance characteristics and analysis have enhanced the hands-on ability of students and tap their creative potential.