Abstract: To meet the teaching and experimental demands for evaluating the avalanche breakdown robustness and reliability of power SiC MOSFET devices, a custom testbench for avalanche reliability verification has been developed. A design and application scheme for the power SiC MOSFET gate drive circuit was proposed. Through establishing an equivalent circuit model for the testbench and performing parameter simulation, the test circuit board was designed and fabricated. The complete experimental platform was constructed, and reliability experiments and research were conducted on commercial SiC MOSFET devices. The current and voltage response curves before and after device failure were analyzed, and the influence of different inductive loads on avalanche characteristics was studied. The experimental results align with the theoretical laws of power MOSFET devices, verifying the effectiveness of the developed testbench. The platform features strong openness, functional extensibility, and low cost, making it suitable for educational training and innovative research in power devices. It provides a testing platform for cultivating outstanding engineers in China’s power device and chip industry.